BS IEC 60747-8-4:2004

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Discrete semiconductor devices – Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications

Published By	Publication Date	Number of Pages
BSI	2004	64

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Categories: 31.080.30 - Transistors, BSI

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Description

Gives details for the following categories of metal-oxide semiconductor field-effect transistors (MOSFETs) with inverse diodes: type B depletion (normally on) type and Type C enhancement (normally off) type.

Additional information

Status	Under Review
Pages	64
Publication Date	2004-11-09
Replaced By	BS IEC 60747-8:2010+A1:2021, BS IEC 60747-8:2010
ISBN	0 580 44729 4
Standard Number	BS IEC 60747-8-4:2004
Title	Discrete semiconductor devices – Metal-oxide semiconductor field-effect transistors (MOSFETs) for power switching applications
Identical National Standard Of	IEC 60747-8-4:2004
Descriptors	Integrated circuits, Semiconductor devices, Transistors, Metal oxide semiconductors, Electronic equipment and components
Publisher	BSI
Committee	EPL/47
ICS Codes	31.080.30 - Transistors

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BS IEC 60747-8-4:2004

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