BS ISO 12406:2010

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon

Published By	Publication Date	Number of Pages
BSI	2010	24

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Categories: 71.040.40 - Chemical analysis, BSI

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Description

This International Standard specifies a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration. This method is applicable to single-crystal, poly-crystal or amorphous silicon specimens with arsenic atomic concentrations between 1 × 10¹⁶ atoms/cm³ and 2,5 × 10²¹ atoms/cm³, and to crater depths of 50 nm or deeper.

Additional information

Status	Confirmed
Pages	24
Publication Date	2010-11-30
ISBN	978 0 580 66874 6
Standard Number	BS ISO 12406:2010
Title	Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of arsenic in silicon
Identical National Standard Of	ISO 12406:2010
Descriptors	Surface chemistry, Arsenic, Interferometry, Depth, Determination of content, Chemical analysis and testing, Silicon, Surfaces, Ions, Profile measurement, Mass spectrometry, Secondary
Publisher	BSI
Committee	CII/60
ICS Codes	71.040.40 - Chemical analysis

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BS ISO 12406:2010

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