ASTM-F996 2003

$40.63

F996-98(2003) Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

Published By	Publication Date	Number of Pages
ASTM	2003	7

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Categories: 31.080.30 - Transistors, ASTM

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Description

ASTM F996-98-Reapproved2003

Historical Standard: Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics

ASTM F996

Scope

1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconducter-field-effect transistor (MOSFET) and an isolation dielectic in a parasitic MOSFET. The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, V INV into voltage shifts due to oxide trapped charge, Vot and interface traps, Vit. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.

1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results.

1.3 The application of this test method requires the MOSFET to have a substrate (body) contact.

1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current.

1.5 The values given in SI units are to be regarded as standard. No other units of measurement are included in this test method.

1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

c/v characteristics; current-voltage characteristics; interface states; ionizing radiation; MOSFET; oxide-trapped holes; threshold voltage shift; trapped holes

ICS Code

ICS Number Code 31.080.30 (Transistors)

DOI: 10.1520/F0996-98R03

PDF Catalog

PDF Pages	PDF Title
1	Scope Terminology Summary of Test Method
2	Significance and Use Interferences FIG. 1 FIG. 2
3	Apparatus FIG. 3 FIG. 4 TABLE 1
4	Test Specimens and Sampling Calibration Test Conditions Procedure Calculation
5	FIG. 5
6	Report Precision and Bias Keywords TABLE 2

Additional information

Standard Title	F996-98(2003) Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
Published Code	ASTM
Publication Date	2003
Pages Count	7
ICS Codes	31.080.30 - Transistors