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BS EN 60747-16-5:2013

$167.15

Semiconductor devices – Microwave integrated circuits. Oscillators

Published By Publication Date Number of Pages
BSI 2013 42
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IEC 60747-16-5:2013 specifies the terminology, essential ratings and characteristics, and measuring methods of microwave integrated circuit oscillators. This standard is applicable to the fixed and voltage-controlled semiconductor microwave oscillator devices, except the oscillator modules such as synthesizers which require external controllers.

PDF Catalog

PDF Pages PDF Title
6 English
CONTENTS
10 1 Scope
2 Normative references
3 Terms and definitions
13 4 Essential ratings and characteristics
4.1 General requirements
4.1.1 Circuit identification and types
4.1.2 General function description
4.1.3 Manufacturing technology
4.1.4 Package identification
4.2 Application description
4.2.1 Conformance to system and/or interface information
4.2.2 Overall block diagram
4.2.3 Reference data
14 4.2.4 Electrical compatibility
4.2.5 Associated devices
4.3 Specification of the function
4.3.1 Detailed block diagram – Functional blocks
4.3.2 Identification and function of terminals
15 4.3.3 Function description
4.4 Limiting values (absolute maximum rating system)
4.4.1 Requirements
16 4.4.2 Electrical limiting values
4.4.3 Temperatures
17 4.5 Operating conditions (within the specified operating temperature range)
4.6 Electrical characteristics
18 4.7 Mechanical and environmental ratings, characteristics and data
4.8 Additional information
5 Measuring methods
5.1 General
5.1.1 General precautions
19 5.1.2 Characteristic impedance
5.1.3 Handling precautions
5.1.4 Types
5.2 Oscillation frequency (fosc)
5.2.1 Purpose
5.2.2 Circuit diagram
5.2.3 Principle of measurement
5.2.4 Circuit description and requirements
5.2.5 Precautions to be observed
Figures
Figure 1 – Circuit diagram for the measurement of the oscillation frequency fosc
20 5.2.6 Measurement procedure
5.2.7 Specified conditions
5.3 Output power (Po,osc)
5.3.1 Purpose
5.3.2 Circuit diagram
5.3.3 Principle of measurement
5.3.4 Circuit description and requirements
5.3.5 Precautions to be observed
5.3.6 Measurement procedure
5.3.7 Specified conditions
21 5.4 Phase noise (L (f))
5.4.1 Purpose
5.4.2 Measuring methods
Tables
Table 1 – Comparison of phase noise measuring methods
22 Figure 2 – Circuit diagram for the measurement of the phase noise L (f) (method 1)
23 Figure 3 – Circuit diagram for the measurement of the phase noise L (f) (method 2)
24 Figure 4 – Circuit diagram for the measurement of the phase noise L (f) (method 3)
26 5.5 Tuning sensitivity (Sf,v)
5.5.1 Purpose
5.5.2 Circuit diagram
5.5.3 Principle of measurement
5.5.4 Circuit description and requirements
5.5.5 Precautions to be observed
5.5.6 Measurement procedure
5.5.7 Specified conditions
5.6 Frequency pushing (fosc, push)
5.6.1 Purpose
27 5.6.2 Circuit diagram
5.6.3 Principle of measurement
5.6.4 Circuit description and requirements
5.6.5 Precautions to be observed
5.6.6 Measurement procedure
5.6.7 Specified conditions
5.7 Frequency pulling (fosc, pull)
5.7.1 Purpose
5.7.2 Circuit diagram
28 5.7.3 Principle of measurement
5.7.4 Circuit description and requirements
5.7.5 Precautions to be observed
5.7.6 Measurement procedure
Figure 5 – Circuit diagram for the measurement of the frequency pulling fosc, pull
29 5.7.7 Specified conditions
5.8 n-th order harmonic distortion ratio (Pnth/P1)
5.8.1 Purpose
5.8.2 Circuit diagram
5.8.3 Principle of measurement
5.8.4 Circuit description and requirements
5.8.5 Measurement procedure
5.8.6 Specified conditions
30 5.9 Output power flatness (ΔPo,osc)
5.9.1 Purpose
5.9.2 Circuit diagram
5.9.3 Principle of measurement
5.9.4 Circuit description and requirements
5.9.5 Precautions to be observed
5.9.6 Measurement procedure
5.9.7 Specified conditions
5.10 Tuning linearity
5.10.1 Purpose
5.10.2 Circuit diagram
31 5.10.3 Principle of measurement
5.10.4 Circuit description and requirements
5.10.5 Precautions to be observed
5.10.6 Measurement procedure
Figure 6 – Tuning linearity
32 5.10.7 Specified conditions
5.11 Frequency temperature coefficient (α f,temp)
5.11.1 Purpose
5.11.2 Circuit diagram
5.11.3 Principle of measurement
Figure 7 – Circuit diagram for the measurement of the oscillationfrequency temperature coefficient α f,temp
33 5.11.4 Circuit description and requirements
5.11.5 Precautions to be observed
5.11.6 Measurement procedure
5.11.7 Specified conditions
5.12 Output power temperature coefficient (αP,temp)
5.12.1 Purpose
5.12.2 Circuit diagram
5.12.3 Principle of measurement
34 5.12.4 Circuit description and requirements
5.12.5 Precautions to be observed
5.12.6 Measurement procedure
5.12.7 Specified conditions
5.13 Spurious distortion ratio (Ps/P1)
5.13.1 Purpose
5.13.2 Circuit diagram
5.13.3 Principle of measurement
35 5.13.4 Circuit description and requirements
5.13.5 Measurement procedure
5.13.6 Specified conditions
5.14 Modulation bandwidth (Bmod)
5.14.1 Purpose
5.14.2 Circuit diagram
36 5.14.3 Principle of measurement
5.14.4 Circuit description and requirements
5.14.5 Precautions to be observed
5.14.6 Measurement procedure
Figure 8 – Circuit diagram for the measurement of the modulation bandwidth Bmod
37 5.14.7 Specified conditions
5.15 Sensitivity flatness
5.15.1 Purpose
5.15.2 Circuit diagram
5.15.3 Principle of measurement
38 5.15.4 Circuit description and requirements
5.15.5 Precautions to be observed
5.15.6 Measurement procedure
5.15.7 Specified conditions
6 Verifying methods
6.1 Load mismatch tolerance (ΨL)
6.1.1 Purpose
6.1.2 Verifying method 1 (spurious intensity)
Figure 9 – Sensitivity flatness
39 6.1.3 Verifying method 2 (no discontinuity of frequency tuning characteristics of VCO)
40 6.2 Load mismatch ruggedness (ΨR)
6.2.1 Purpose
6.2.2 Circuit diagram
6.2.3 Circuit description and requirements
6.2.4 Precautions to be observed
6.2.5 Test Procedure
41 6.2.6 Specified conditions
42 Bibliography
BS EN 60747-16-5:2013
$167.15