BS EN 62979:2017
$102.76
Photovoltaic modules. Bypass diode. Thermal runaway test (IEC 2979:2017)
| Published By | Publication Date | Number of Pages |
| BSI | 2017 | 20 |
This document provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating.
This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.
The test specimens which employ P/N diodes as bypass diodes are exempted from the thermal runaway test required herein, because the capability of P/N diodes to withstand the reverse bias is sufficiently high.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 2 | undefined |
| 7 | CONTENTS |
| 8 | FOREWORD |
| 10 | INTRODUCTION |
| 11 | 1 Scope 2 Normative references 3 Terms and definitions |
| 12 | 4 Thermal runaway test 4.1 Diode thermal runaway Figure 1 – Illustration of how thermal runaway occurs |
| 13 | 4.2 Test conditions 4.3 Preparation of test specimen |
| 14 | 4.4 Test equipment Figure 2 – Circuit for measurement of Tlead and forward voltage |
| 15 | 4.5 Test procedure Figure 3 – Circuit for flowing a forward current to the bypass diode Figure 4 – Circuit for applying a reverse bias voltage to the bypass diode |
| 16 | Figure 5 – The typical pattern of thermal runaway Figure 6 – The pattern of non-thermal runaway |
| 17 | 5 Pass or fail criteria 6 Test report |
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BS EN 62979:2017
Photovoltaic modules. Bypass diode. Thermal runaway test (IEC 2979:2017) Published By Publication Date Number of…
