BS EN IEC 60749-18:2019 – TC:2020 Edition
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Tracked Changes. Semiconductor devices. Mechanical and climatic test methods – Ionizing radiation (total dose)
| Published By | Publication Date | Number of Pages |
| BSI | 2020 | 54 |
IEC 60749-18:2019 is available as IEC 60749-18:2019 RLV which contains the International Standard and its Redline version, showing all changes of the technical content compared to the previous edition. IEC 60749-18:2019 provides a test procedure for defining requirements for testing packaged semiconductor integrated circuits and discrete semiconductor devices for ionizing radiation (total dose) effects from a cobalt-60 (60Co) gamma ray source. Other suitable radiation sources can be used. This document addresses only steady-state irradiations, and is not applicable to pulse type irradiations. It is intended for military- and aerospace-related applications. It is a destructive test. This edition includes the following significant technical changes with respect to the previous edition: – updates to subclauses to better align the test method with MIL-STD 883J, method 1019, including the use of enhanced low dose rate sensitivity (ELDRS) testing; – addition of a Bibliography, which includes ASTM standards relevant to this test method.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 1 | compares BS EN IEC 60749‑18:2019 |
| 2 | TRACKED CHANGES Text example 1 — indicates added text (in green) |
| 3 | Cross-references Compliance with a British Standard does not of itselfcannot confer immunity from legal obligations. |
| 4 | Amendments/corrigenda issued since publication |
| 5 | Semiconductor devices – Mechanical and climatic test methods – Part 18: Ionizing radiation (total dose) |
| 9 | INTERNATIONAL ELECTROTECHNICAL COMMISSION FOREWORD |
| 11 | SEMICONDUCTOR DEVICES – MECHANICAL AND CLIMATIC TEST METHODS – 1 Scope 2 Normative references 2.13.1 |
| 12 | 2.23.2 3.3 2.33.4 2.43.5 2.53.6 2.63.7 3.8 3.9 3.10 34 Test apparatus 4.1 Choice of apparatus |
| 13 | 3.14.2 Radiation source 3.24.3 Dosimetry system 3.34.4 Electrical test instruments 3.44.5 Test circuit board(s) 3.54.6 Cabling 3.64.7 Interconnect or switching system |
| 14 | 3.74.8 Environmental chamber 4.9 Irradiation temperature chamber 45 Procedure 5.1 Test plan 4.15.2 Sample selection and handling 4.25.3 Burn-in 4.35.4 Dosimetry measurements |
| 15 | 4.45.5 Lead/aluminium (Pb/Al) container 4.55.6 Radiation level(s) 4.6 Radiation dose rate 5.7 Radiation dose rate 5.7.1 Radiation dose rate determination 4.6.15.7.2 Condition A 4.6.25.7.3 Condition B 4.6.35.7.4 Condition C |
| 16 | 5.8.1 Room temperature radiation 5.8.2 Elevated temperature irradiation 5.8.3 Cryogenic temperature irradiation 4.85.9 Electrical performance measurements |
| 17 | 4.95.10 Test conditions 5.10.1 Choice of test conditions 4.9.15.10.2 In-flux testing 4.9.25.10.3 Remote testing 4.9.35.10.4 Bias and loading conditions 4.105.11 Post-irradiation procedure |
| 18 | 4.115.12 Extended room temperature annealannealing test 5.12.1 Choice of annealing test 4.11.15.12.2 Need to perform an extended room temperature annealannealing test |
| 19 | 4.11.25.12.3 Extended room temperature annealannealing test procedure 5.13 MOS accelerated annealing test 4.12.15.13.2 Need to perform accelerated annealing test |
| 20 | 4.12.25.13.3 Accelerated annealing test procedure |
| 21 | 5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with intended application dose rates less than 0,5 Gy(Si)/s 5.14.1 Need to perform ELDRS testing 5.14.2 Determination of whether a part exhibits ELDRS 5.14.3 Characterization of ELDRS parts to determine the irradiation conditions for production or lot acceptance testing |
| 22 | 5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or BiCMOS linear or mixed-signal devices 4.135.15 Test report |
| 23 | 56 Summary |
| 25 | Figure 1 – Flow diagram for ionizing radiation test procedure for MOS and digital bipolar devices |
| 26 | Figure 2 – Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS) linear or mixed-signal devices |
| 27 | Bibliography |
| 30 | undefined |
| 33 | English CONTENTS |
| 35 | FOREWORD |
| 37 | 1 Scope 2 Normative references 3 Terms and definitions |
| 39 | 4 Test apparatus 4.1 Choice of apparatus 4.2 Radiation source 4.3 Dosimetry system 4.4 Electrical test instruments 4.5 Test circuit board(s) |
| 40 | 4.6 Cabling 4.7 Interconnect or switching system 4.8 Environmental chamber 4.9 Irradiation temperature chamber 5 Procedure 5.1 Test plan 5.2 Sample selection and handling |
| 41 | 5.3 Burn-in 5.4 Dosimetry measurements 5.5 Lead/aluminium (Pb/Al) container 5.6 Radiation level(s) 5.7 Radiation dose rate 5.7.1 Radiation dose rate determination |
| 42 | 5.7.2 Condition A 5.7.3 Condition B 5.7.4 Condition C 5.7.5 Condition D 5.7.6 Condition E 5.8 Temperature requirements 5.8.1 Room temperature radiation 5.8.2 Elevated temperature irradiation |
| 43 | 5.8.3 Cryogenic temperature irradiation 5.9 Electrical performance measurements 5.10 Test conditions 5.10.1 Choice of test conditions 5.10.2 In-flux testing 5.10.3 Remote testing |
| 44 | 5.10.4 Bias and loading conditions 5.11 Post-irradiation procedure |
| 45 | 5.12 Extended room temperature annealing test 5.12.1 Choice of annealing test 5.12.2 Need to perform an extended room temperature annealing test 5.12.3 Extended room temperature annealing test procedure |
| 46 | 5.13 MOS accelerated annealing test 5.13.1 Choice of MOS accelerated annealing test 5.13.2 Need to perform accelerated annealing test |
| 47 | 5.13.3 Accelerated annealing test procedure 5.14 Test procedure for bipolar and BiCMOS linear or mixed signal devices with intended application dose rates less than 0,5 Gy(Si)/s 5.14.1 Need to perform ELDRS testing |
| 48 | 5.14.2 Determination of whether a part exhibits ELDRS 5.14.3 Characterization of ELDRS parts to determine the irradiation conditions for production or lot acceptance testing |
| 49 | 5.14.4 Low dose rate or elevated temperature irradiation test for bipolar or BiCMOS linear or mixed-signal devices 5.15 Test report 6 Summary |
| 50 | Figure 1 – Flow diagram for ionizing radiation test procedure for MOS and digital bipolar devices |
| 51 | Figure 2 – Flow diagram for ionizing radiation test procedure for bipolar (or BiCMOS) linear or mixed-signal devices |
| 52 | Bibliography |
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BS EN IEC 60749-18:2019 – TC:2020 Edition
Tracked Changes. Semiconductor devices. Mechanical and climatic test methods – Ionizing radiation (total dose) Published…
