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BS IEC 62899-503-3:2021

BS IEC 62899-503-3:2021

$102.76

Printed electronics – Quality assessment. Measuring method of contact resistance for the printed thin film transistor. Transfer length method

Published By Publication Date Number of Pages
BSI 2021 16
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This part of IEC 62899 specifies a measuring method of contact resistance for printed thin film transistors (TFTs) by the transfer length method (TLM). The method requires the fabrication of a test element group (TEG) with varying channel length (L) between source and drain electrodes. The method is intended for quality assessment of TFT electrode contacts and is suited for determining whether the contact resistance lies within a desired range.

PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
5 FOREWORD
7 INTRODUCTION
8 1 Scope
2 Normative references
3 Terms and definitions
9 4 Symbols and abbreviated terms
Figures
Figure 1 – Schematic structure of printed thin film transistors (TFTs)
10 5 Measuring method of contact resistance
5.1 General
5.2 Preparation of TEGs
Figure 2 – Measurement configuration
11 5.3 Measuring apparatus
5.4 Environmental conditions and storage
5.5 Measuring procedure
12 5.6 Data analysis
5.6.1 Calculation procedure of normalized resistances for each TEG
5.6.2 Derivation procedure of contact resistance (Rc)
Figure 3 – Example of plots of the total resistance R versus the distancebetween the source and drain electrode (channel length) L
13 5.7 Report
14 Annex A (informative)Examples of sets of source and drain electrodes layouts in a TEG
Figure A.1 – Example of a set of source and drain electrodes in a TEG
15 Bibliography

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BS IEC 62899-503-3:2021
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