BS ISO 17560:2002

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Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon

Published By	Publication Date	Number of Pages
BSI	2002	20

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Categories: 71.040.40 - Chemical analysis, BSI

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PDF Pages	PDF Title
3	TitlePage – Surface chemical analysis�— Secondary-ion mass spectrometry�— Method for depth profil…
5	TableofContent – Contents Page
6	Foreword – Foreword
7	Introduction – Introduction
9	Scope – 1�� Scope NormativeReference – 2�� Normative reference Clause1 – 3�� Symbols and abbreviated terms
10	Clause1 – 4�� Principle Clause1 – 5�� Reference materials Subclause2 – 5.1�� Reference materials for determination of relative-sensitivity factors Subclause2 – 5.2�� Reference materials for calibration of depth scale Clause1 – 6�� Apparatus Subclause2 – 6.1�� Secondary-ion mass spectrometer Subclause2 – 6.2�� Stylus profilometer Subclause2 – 6.3�� Optical interferometer
11	Clause1 – 7�� Specimen Clause1 – 8�� Procedures Subclause2 – 8.1�� Adjustment of secondary-ion mass spectrometer UntitledSubclause3 – 8.1.1�� For oxygen-ion beam use, see UntitledSubclause3 – 8.1.2�� For the primary-ion beam, the beam current and scan region can be v… Subclause2 – 8.2�� Optimizing the secondary-ion mass spectrometer settings UntitledSubclause3 – 8.2.1�� Set the required instrument parameters and align the ion optics in … UntitledSubclause3 – 8.2.2�� Ensure the stability of the primary-ion current and the mass spectr… UntitledSubclause3 – 8.2.3�� For a mass spectrometer whose transmission can be varied, use the s…
12	Subclause2 – 8.3�� Specimen introduction Subclause2 – 8.4�� Detected ions UntitledSubclause3 – 8.4.1�� When an oxygen-ion beam is used, both UntitledSubclause3 – 8.4.2�� The ion species of silicon which has an appropriate ion intensity s… Subclause2 – 8.5�� Measurement of test specimen UntitledSubclause3 – 8.5.1�� Measurements shall be made in the central region of the specimen ho… UntitledSubclause3 – 8.5.2�� The primary-ion beam current and the beam scan area shall be chosen… UntitledSubclause3 – 8.5.3�� The secondary-ion intensities of boron and silicon shall be measure…
13	Subclause2 – 8.6�� Calibration Subclause3 – 8.6.1�� Determination of relative-sensitivity factor Subclause3 – 8.6.2�� Calibration of depth scale by stylus profilometry UntitledSubclause4 – 8.6.2.1�� Calibrate the stylus profilometer for crater depth measurements u… UntitledSubclause4 – 8.6.2.2�� Measure the crater depth Subclause3 – 8.6.3�� Calibration of depth scale by optical interferometry UntitledSubclause4 – 8.6.3.1�� Measure the crater depth UntitledSubclause4 – 8.6.3.2�� Detailed procedures for measurement of interference fringes shall… UntitledSubclause4 – 8.6.3.3�� The crater depth shall be obtained using the following formula:
14	Clause1 – 9�� Expression of results UntitledSubclause2 – 9.1�� Ion intensity ratios of boron to silicon shall be determined for each… UntitledSubclause2 – 9.2�� The boron atomic concentration of the test specimen shall be determin… UntitledSubclause2 – 9.3�� When necessary, the background intensity of boron shall be subtracted… UntitledSubclause2 – 9.4�� The depth for measurement cycle UntitledSubclause2 – 9.5�� When the total number of measurement cycles UntitledSubclause2 – 9.6�� When graphical expression of the results is necessary, Clause1 – 10�� Test report
16	AnnexInformative – Statistical report of stylus profilometry measurements Clause1 – A.1�� Introduction Clause1 – A.2�� Design of test programme Clause1 – A.3�� Test specimen Clause1 – A.4�� Procedure of stylus measurement Clause1 – A.5�� Statistical procedures Subclause2 – A.5.1�� Scrutiny for consistency and outliers Subclause2 – A.5.2�� Computation of repeatability and reproducibility
17	Clause1 – A.6�� Results of statistical analysis UntitledSubclause2 – A.6.1�� The results of the statistical analysis are given in
18	Bibliography – Bibliography

Additional information

Status	Withdrawn
Title	Surface chemical analysis. Secondary-ion mass spectrometry. Method for depth profiling of boron in silicon
Publisher	BSI
Committee	CII/60
Pages	20
Publication Date	2002-08-28
Withdrawn Date	2014-09-30
Replaced By	BS ISO 17560:2014
ISBN	0 580 40299 1
Standard Number	BS ISO 17560:2002
Identical National Standard Of	ISO 17560:2002
Descriptors	Chemical analysis and testing, Depth, Silicon, Spectroscopy, Ions, Boron, Mass spectrometry, Determination of content, Secondary, Surface chemistry
ICS Codes	71.040.40 - Chemical analysis

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