BSI PD CEN/CLC/TR 17603-10-12:2021
$215.11
Space engineering. Calculation of radiation and its effects and margin policy handbook
Published By | Publication Date | Number of Pages |
BSI | 2021 | 130 |
This handbook is a part of the System Engineering branch and covers the methods for the calculation of radiation received and its effects, and a policy for design margins. Both natural and man-made sources of radiation (e.g. radioisotope thermoelectric generators, or RTGs) are considered in the handbook.
This handbook can be applied to the evaluation of radiation effects on all space systems.
This handbook can be applied to all product types which exist or operate in space, as well as to crews of on manned space missions.
This handbook complements to EN 16603-10-12 āMethods for the calculation of radiation received and its effects and a policy for the design marginā.
PDF Catalog
PDF Pages | PDF Title |
---|---|
2 | undefined |
12 | 1 Scope |
13 | 2 Terms, definitions and abbreviated terms 2.1 Terms from other documents 2.2 Terms specific to the present handbook 2.3 Abbreviated terms |
14 | 3 Compendium of radiation effects 3.1 Purpose |
16 | 3.2 Effects on electronic and electrical systems 3.2.1 Total ionising dose 3.2.2 Displacement damage |
17 | 3.2.3 Single event effects |
18 | 3.3 Effects on materials 3.4 Payload-specific radiation effects |
19 | 3.5 Biological effects 3.6 Spacecraft charging 3.7 References |
21 | 4 Margin 4.1 Introduction 4.1.1 Application of margins |
22 | 4.2 Environment uncertainty |
23 | 4.3 Effects parametersā uncertainty 4.3.1 Overview 4.3.2 Shielding |
24 | 4.3.3 Ionising dose calculation 4.3.4 Non-ionising dose (NIEL, displacement damage) 4.3.5 Single event effects |
25 | 4.3.6 Effects on sensors 4.4 Testing-related uncertainties 4.4.1 Overview 4.4.2 Beam characteristics 4.4.3 Radioactive sources |
26 | 4.4.4 Packaging 4.4.5 Penetration 4.4.6 Representativeness 4.5 Procurement processes and device reproducibility |
27 | 4.6 Project management decisions 4.7 Relationship with derating 4.8 Typical design margins 4.9 References |
28 | 5 Radiation shielding 5.1 Introduction 5.2 Radiation transport processes 5.2.1 Overview 5.2.2 Electrons |
30 | 5.2.3 Protons and other heavy particles |
34 | 5.2.4 Electromagnetic radiation ā bremsstrahlung |
35 | 5.3 Ionising dose enhancement 5.4 Material selection 5.5 Equipment design practice 5.5.1 Overview |
36 | 5.5.2 The importance of layout 5.5.3 Add-on shielding 5.5.3.1 Introduction |
37 | 5.5.3.2 On-PCB shielding |
38 | 5.5.3.3 Whole box shielding 5.6 Shielding calculation methods and tools ā Decision on using deterministic radiation calculations, detailed Monte Carlo simulations, or sector shielding analysis |
47 | 5.7 Example detailed radiation transport and shielding codes 5.8 Uncertainties |
48 | 5.9 References |
50 | 6 Total ionising dose 6.1 Introduction 6.2 Definition 6.3 Technologies sensitive to total ionising dose |
52 | 6.4 Total ionising dose calculation 6.5 Uncertainties |
53 | 7 Displacement damage 7.1 Introduction 7.2 Definition 7.3 Physical processes and modelling |
57 | 7.4 Technologies susceptible to displacement damage 7.4.1 Overview |
58 | 7.4.2 Bipolar |
59 | 7.4.3 Charge-coupled devices (CCD) 7.4.4 Active pixel sensors (APS) |
60 | 7.4.5 Photodiodes 7.4.6 Laser diodes 7.4.7 Light emitting diode (LED) 7.4.8 Optocouplers |
61 | 7.4.9 Solar cells 7.4.10 Germanium detectors |
62 | 7.4.11 Glasses and optical components 7.5 Radiation damage assessment 7.5.1 Equivalent fluence calculation 7.5.2 Calculation approach 7.5.3 3-D Monte Carlo analysis 7.5.4 Displacement damage testing |
63 | 7.6 NIEL rates for different particles and materials |
70 | 7.7 Uncertainties 7.8 References |
72 | 8 Single event effects 8.1 Introduction |
73 | 8.2 Modelling 8.2.1 Overview 8.2.2 Notion of LET (for heavy ions) 8.2.3 Concept of cross section |
74 | 8.2.4 Concept of sensitive volume, critical charge and effective LET |
75 | 8.3 Technologies susceptible to single event effects 8.4 Test methods 8.4.1 Overview 8.4.2 Heavy ion beam testing |
76 | 8.4.3 Proton and neutron beam testing 8.4.4 Experimental measurement of SEE sensitivity |
77 | 8.4.5 Influence of testing conditions 8.4.5.1 Overview 8.4.5.2 Energy and track structure dependence |
78 | 8.4.5.3 Angle effect on device response 8.4.5.4 Pattern influence |
79 | 8.5 Hardness assurance 8.5.1 Rate prediction 8.5.2 Prediction of SEE rates for ions |
81 | 8.5.3 Improvements |
82 | 8.5.4 Method synthesis 8.5.5 Prediction of SEE rates of protons and neutrons |
84 | 8.5.6 Method synthesis 8.5.7 Calculation toolkit 8.5.8 Applicable derating and mitigating techniques 8.5.9 Analysis at system level |
85 | 8.6 Destructive SEE 8.6.1 Single event latch-up (SEL) and single event snapback (SESB) 8.6.1.1 Definition 8.6.1.2 Sensitive devices 8.6.1.3 Modelling |
86 | 8.6.1.4 Test method 8.6.1.5 Hardness Assurance 8.6.1.6 Prediction issues in case of SEL |
87 | 8.6.2 Single event gate rupture (SEGR) and single event dielectric rupture (SEDR) 8.6.2.1 Definition 8.6.2.2 Sensitive devices 8.6.2.3 Modelling 8.6.2.4 Test method |
88 | 8.6.2.5 Hardness Assurance 8.6.3 Single event burnout (SEB) 8.6.3.1 Definition 8.6.3.2 Sensitive devices 8.6.3.3 Modelling 8.6.3.4 Test method 8.6.3.5 Hardness Assurance |
89 | 8.7 Non-destructive SEE 8.7.1 Single event upset (SEU) 8.7.1.1 Definition 8.7.1.2 Sensitive devices 8.7.1.3 Modelling 8.7.1.4 Test method 8.7.1.5 Hardness assurance 8.7.2 Multiple-cell upset (MCU) and single word multiple-bit upset (SMU) 8.7.2.1 Definitions |
90 | 8.7.2.2 Devices susceptible to MCU 8.7.2.3 Modelling 8.7.2.4 Test |
91 | 8.7.2.5 Hardness assurance 8.7.3 Single event functional interrupt (SEFI) 8.7.3.1 Definition 8.7.3.2 Susceptible components 8.7.3.3 Modelling 8.7.3.4 Test method 8.7.3.5 Hardness assurance |
92 | 8.7.4 Single event hard error (SEHE) 8.7.4.1 Definition 8.7.4.2 Devices susceptible to SEHE 8.7.4.3 Modelling 8.7.4.4 Test method |
93 | 8.7.4.5 Hardness assurance 8.7.5 Single event transient (SET) and single event disturb (SED) 8.7.5.1 Definition 8.7.5.2 Sensitive devices |
94 | 8.7.5.3 Modelling 8.7.5.4 Test method 8.7.5.5 Hardness assurance 8.8 References |
98 | 9 Radiation-induced sensor backgrounds 9.1 Introduction 9.2 Background in ultraviolet, optical and infrared imaging sensors |
102 | 9.3 Background in charged particle detectors 9.4 Background in X-ray CCDs |
103 | 9.5 Radiation background in gamma-ray instruments |
106 | 9.6 Photomultipliers tubes and microchannel plates |
107 | 9.7 Radiation-induced noise in gravity-wave detectors 9.8 Other problems common to detectors |
108 | 9.9 References |
110 | 10 Effects in biological material 10.1 Introduction 10.2 Quantities used in radiation protection work 10.2.1 Overview |
111 | 10.2.2 Protection quantities |
113 | 10.2.3 Operational quantities |
115 | 10.3 Radiation effects in biological systems 10.3.1 Overview |
116 | 10.3.2 Source of data 10.3.3 Early effects |
117 | 10.3.4 Late effects 10.3.4.1 Overview 10.3.4.2 Stochastic late effects |
118 | 10.3.4.3 Deterministic late effects |
119 | 10.4 Radiation protection limits in space 10.4.1 Overview 10.4.2 International agreements |
120 | 10.4.3 Other considerations in calculating crew exposure 10.4.4 Radiation limits used by the space agencies of the partners of the International Space Station (ISS) 10.4.4.1 Proposed CSA Limits |
121 | 10.4.4.2 Proposed ESA Limits 10.4.4.3 Proposed NASA limits |
122 | 10.4.4.4 Proposed JAXA Limits |
123 | 10.4.4.5 Proposed RSA Limits |
124 | 10.5 Uncertainties 10.5.1 Overview 10.5.2 Spacecraft shielding interactions 10.5.3 The unique effects of heavy ions |
125 | 10.5.4 Extrapolation from high-dose effects to low-dose effects 10.5.5 Variability in composition, space and time 10.5.6 Effects of depth-dose distribution 10.5.7 Influence of spaceflight environment |
127 | 10.5.8 Uncertainties summary 10.6 References |