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BSI PD IEC TR 62396-8:2020

BSI PD IEC TR 62396-8:2020

$198.66

Process management for avionics. Atmospheric radiation effects – Proton, electron, pion, muon, alpha-ray fluxes and single event effects in avionics electronic equipment. Awareness guidelines

Published By Publication Date Number of Pages
BSI 2020 62
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This part of IEC 62396 is intended to provide awareness and guidance with regard to the effects of small particles (that is, protons, electrons, pions and muon fluxes) and single event effects on avionics electronics used in aircraft operating at altitudes up to 60 000 feet (18 300 m). This is an emerging topic and lacks substantive supporting data. This document is intended to help aerospace or ground level electronic equipment manufacturers and designers by providing awareness guidance for this new emerging topic.

Details of the radiation environment are provided together with identification of potential problems caused as a result of the atmospheric radiation received. Appropriate methods are given for quantifying single event effect (SEE) rates in electronic components.

NOTE 1 The overall system safety methodology is usually expanded to accommodate the single event effects rates and to demonstrate the suitability of the electronics for application at the electronic component, electronic equipment and system level.

NOTE 2 For the purposes of this document the terms “electronic device” and “electronic component” are used interchangeably.

Although developed for the avionics industry, this document can be used by other industrial sectors at their discretion.

PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
7 FOREWORD
9 INTRODUCTION
10 1 Scope
2 Normative references
3 Terms, definitions, abbreviated terms and acronyms
11 3.1 Terms and definitions
12 3.2 Abbreviated terms and acronyms
14 4 Technical awareness
4.1 Basic knowledge of atmospheric secondary particles
15 Figures
Figure 1 – Cosmic rays as origin of single event effects
16 Figure 2 – Initial stage of secondary particle production
Figure 3 – Differential high-energy neutron spectrum at sea level in NYC
17 4.2 Four typical hierarchies of faulty conditions in electronic equipment: Fault – error – hazard – failure
Figure 4 – Long-term cyclic variation in neutron flux measuredat Moscow Neutron Monitor Center
Figure 5 – Differential proton spectra originating from solar-minimum sun,from big flares on the sun, and from the galactic core
19 Tables
Table 1 – General modes of faults
20 4.3 General sources of radiation
4.3.1 General sources of terrestrial radiation
Figure 6 – Typical hierarchy of fault conditions: Fault-error-failure
21 4.3.2 Atmospheric radiation particles
Figure 7 – Sources of atmospheric ionizing radiation:Nuclear reactions and radioactive decay
Table 2 – Properties of atmospheric radiation particles
24 4.3.3 Spectra at the avionics altitude
Figure 8 – Differential flux of secondary cosmic raysat avionics altitude (10 000 m) above NYC sea level
Table 3 – Selected data sources for spectra of atmospheric radiation particles
25 Figure 9 – Differential flux of terrestrial radiation at NYC sea level
26 Figure 10 – Measured differential flux of high-energy neutrons at NYC sea leveland at avionics altitudes (5 000 m, 11 000 m and 20 000 m)
27 4.4 Particle considerations
4.4.1 General
4.4.2 Alpha particles
Figure 11 – Cumulative flux of terrestrial radiation at avionicsaltitude above NYC sea level
28 4.4.3 Protons
Table 4 – Non-exhaustive list of methods for alpha-particle SEE measurements
29 Figure 12 – Comparison of measured cross section of memorydevices irradiated by high-energy protons and neutrons
Table 5 – Non-exhaustive list of facilities for proton irradiation
32 4.4.4 Muons and pions
Figure 13 – Simplified scheme ofmuon/pion irradiation system
33 Table 6 – Non-exhaustive list of facilities for muon irradiation
34 4.4.5 Low-energy neutrons
Figure 14 – Nuclear capture of cross section of cadmium isotopes
35 4.4.6 High-energy neutrons
Table 7 – Non-exhaustive list of facilities for thermal/epi-thermal neutron irradiation
37 Figure 15 – Neutron energy spectra of monoenergetic neutron beam facilities
Figure 16 – Neutron energy spectra fromradioisotope neutron sources
38 Table 8 – Non-exhaustive list of facilities for low-energy neutron irradiation
39 Figure 17 – Simplified high-energy neutron beam sourcein a quasi-monoenergetic neutron source
40 Figure 18 – Neutron energy spectra of quasi-monoenergetic neutron beam facilities
41 Figure 19 – Conceptual illustration of cross section data obtained by (quasi-) monoenergetic neutron sources and fitting curve by Weibull fit
42 Table 9 – Non-exhaustive list of facilities for quasi-monoenergetic neutron irradiation
43 Figure 20 – Simplified high-energy neutron beam source in a spallation neutron source
44 Figure 21 – Neutron energy spectra of spallation neutron sources and terrestrial field
Table 10 – Non-exhaustive list of facilities for nuclear spallation neutron irradiation
45 4.5 Conclusion and guidelines
47 Annex A (informative)CMOS semiconductor devices
Figure A.1 – Basic substrate structure used for CMOSFET devices on the stripe structure of p- and n-wells and cross sections of triple and dual wells
48 Figure A.2 – SRAM function and layout
Figure A.3 – Example of logic circuit
49 Figure A.4 – Example of electronic system implementation
Figure A.5 – Example of stack layers in an electronic system
50 Annex B (informative)General description of radiation effects
B.1 Radiation effects in semiconductor materials by a charged particle – Charge collection and bipolar action
Figure B.1 – Charge collection in a semiconductor structure by funnelling
51 B.2 Radiation effects by protons
Figure B.2 – Bipolar action model in a triple well n-MOSFET structure
52 Figure B.3 – Charge deposition density of various particles in siliconas a function of particle energy
Figure B.4 – Total nuclear reaction cross section of high-energyproton and neutron in silicon
53 B.3 Radiation effects by low-energy neutrons
Figure B.5 – Microscopic fault mechanism due to spallation reactionof high-energy neutron and proton in a SRAM cell
54 B.4 Radiation effects by high-energy neutrons
Figure B.6 – (n,α) reaction cross section of low-energy neutrons with 10B
Figure B.7 – Calculated energy spectra of Li and He producedby neutron capture reaction with 10B(n,α)7Li reaction
55 B.5 Radiation effects by heavy ions
Figure B.8 – Ranges of typical isotopes produced by nuclearspallation reaction of high-energy neutron in silicon
Figure B.9 – Calculated energy spectra of elements produced by nuclear spallation reaction of high-energy neutrons in silicon at Tokyo sea level

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BSI PD IEC TR 62396-8:2020
$198.66