BSI PD IEC TS 62607-5-3:2020
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Nanomanufacturing. Key control characteristics – Thin-film organic/nano electronic devices. Measurements of charge carrier concentration
| Published By | Publication Date | Number of Pages |
| BSI | 2020 | 24 |
This part of IEC TS 62607, which is a Technical Specification, specifies sample structures for evaluating a wide range of charge carrier concentration in organic/nano materials. This specification is provided for both capacitance-voltage (C-V) measurements in metal/insulator/semiconductor stacking structures and Hall-effect measurements with the van der Pauw configuration. Criteria for choosing measurement methods of charge carrier concentration in organic semiconductor layers are also given in this document.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 2 | undefined |
| 4 | CONTENTS |
| 5 | FOREWORD |
| 7 | INTRODUCTION |
| 8 | 1 Scope 2 Normative references 3 Terms and definitions 4 Sample structures 4.1 Metal/insulator/semiconductor (MIS) structure |
| 9 | 4.2 Thin-film specimens with the van der Pauw configuration Figures Figure 1 – Typical metal/insulator/semiconductor (MIS) structures Figure 2 – An organic MIS structure favourable for capacitance-voltage measurements |
| 10 | 5 Criteria for choosing a method for measuring carrier concentration in organic semiconductor layers 6 Appropriate data formats Figure 3 – Sample structures for Hall-effect measurementwith the van der Pauw configuration |
| 11 | Table 1 – Possible data format to be given together withcarrier concentrations obtained with capacitance-voltage measurements Table 2 – Possible data format to be given together withcarrier concentrations obtained with the Hall-effect measurements |
| 12 | Annex A (informative)Case study of carrier concentration measurements of organic materials A.1 Procedure of capacitance-voltage (C-V) measurement Figure A.1 – Equivalent circuit model for capacitance-voltagemeasurement with MIS structure |
| 13 | A.2 Capacitance-voltage measurement for unoptimized pentacene MIS structures Figure A.2 – Typical capacitance-voltage curves observedfor MIS structures with organic semiconductor films |
| 14 | Figure A.3 – Capacitance-voltage curves obtainedfor the MIS structure with 70-nm-thick-pentacene film |
| 15 | A.3 Influences of semiconductor layer thickness and electrode contact conditions on C-V measurements |
| 16 | A.4 Capacitance-voltage measurement for a pentacene MIS structure with an ultrathin insulator |
| 18 | Figure A.5 – Capacitance-voltage curves obtained for a pentaceneMIS structure with an ultrathin SAM-modified AlOx insulator |
| 19 | A.5 Procedure of Hall-effect measurement |
| 20 | A.6 Hall-effect measurement for organic semiconductor single-crystalline layers |
| 21 | Figure A.6 – Hall-effect measurement results for rubrenesingle-crystalline layer doped with ferric chloride |
| 22 | Bibliography |
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BSI PD IEC TS 62607-5-3:2020
Nanomanufacturing. Key control characteristics – Thin-film organic/nano electronic devices. Measurements of charge carrier concentration Published…
