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BSI PD IEC TS 62607-8-3:2023

BSI PD IEC TS 62607-8-3:2023

$102.76

Nanomanufacturing. Key Control Characteristics – Nano-enabled metal-oxide interfacial devices. Analogue resistance change and resistance fluctuation: Electrical resistance measurement

Published By Publication Date Number of Pages
BSI 2023 22
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PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
5 FOREWORD
7 INTRODUCTION
8 1 Scope
2 Normative references
3 Terms, definitions, acronyms, and abbreviated terms
3.1 Terms and definitions
9 3.2 Terms specific to this document
3.3 Abbreviated terms
4 Measurement of resistance
4.1 General
10 4.2 Method for processing and fabrication of DUT
4.3 Experimental procedures
Figures
Figure 1 – Example of the experimental schematic diagram for the resistance measurement
Figure 2 – Photos of the sample stage
11 5 Reporting data
6 Data analysis and interpretation of results
6.1 General
Tables
Table 1 – Measurement sequence of analogue resistance change and its parameters
12 6.2 Parameter fitting
6.3 Interpretation of results
13 Annex A (informative)Case study
A.1 Measurement of the analogue change and the fluctuation of the resistance
A.1.1 General
A.1.2 I-V measurement of TiN/Ta-oxide/TiN
Figure A.1 – Transmission electron microscopy image of TiN/Ta-oxide/TiN
14 Figure A.2 – DC I-V measurement
15 Figure A.3 – Pulse measurement
Figure A.4 – Initial measurement
Figure A.5 – Repeated measurement
16 Figure A.6 – Post-measurement characterization
Table A.1 – Measurement sequence of analogue resistance change and its parameters (case study)
17 A.1.3 Data analysis
18 Figure A.7 – Conductance increasing process
Figure A.8 – Normalized conductance in increasing process
Figure A.9 – Conductance decreasing process
19 Figure A.10 – Normalized conductance in decreasing process
Table A.2 – Results of parameter fitting
Table A.3 – Results of parameter fitting using normalized conductance (normalize range = ∆Gmax in Table A.2)
20 Bibliography

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BSI PD IEC TS 62607-8-3:2023
$102.76