{"id":18136,"date":"2024-10-16T22:33:45","date_gmt":"2024-10-16T22:33:45","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/astm-f996-2010\/"},"modified":"2024-10-24T12:36:41","modified_gmt":"2024-10-24T12:36:41","slug":"astm-f996-2010","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/astm\/astm-f996-2010\/","title":{"rendered":"ASTM-F996 2010"},"content":{"rendered":"

ASTM F996-10<\/h3>\n

Historical Standard: Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics<\/h4>\n
\n

ASTM F996<\/h4>\n

Scope<\/strong><\/p>\n

1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET. ,<\/sup> ,<\/sup> The subthreshold technique is used to separate the ionizing radiation-induced inversion voltage shift, \u0394<\/span>V<\/span>INV<\/span><\/sub> into voltage shifts due to oxide trapped charge, \u0394<\/span>V<\/span>ot<\/span><\/sub> and interface traps, \u0394<\/span>V<\/span>it<\/span><\/sub>. This technique uses the pre- and post-irradiation drain to source current versus gate voltage characteristics in the MOSFET subthreshold region.<\/p>\n

1.2 Procedures are given for measuring the MOSFET subthreshold current-voltage characteristics and for the calculation of results.<\/p>\n

1.3 The application of this test method requires the MOSFET to have a substrate (body) contact.<\/p>\n

1.4 Both pre- and post-irradiation MOSFET subthreshold source or drain curves must follow an exponential dependence on gate voltage for a minimum of two decades of current.<\/p>\n

1.5 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.<\/p>\n

1.6 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.<\/span><\/p>\n

Keywords<\/strong><\/p>\n

c\/v characteristics; current\u2013<\/span>voltage characteristics; interface states; ionizing radiation; MOSFET; oxide-trapped holes; threshold voltage shift; trapped holes; Current measurement–semiconductors; Electrical conductors (semiconductors); Gate and field oxides; Ionizing radiation; MOSFETs; Radiation exposure–electronic components\/devices; Silicon semiconductors; Threshold voltage<\/p>\n

ICS Code<\/strong><\/p>\n

ICS Number Code 31.080.30 (Transistors)<\/p>\n

DOI:<\/strong> 10.1520\/F0996-10<\/p>\n<\/div>\n

PDF Catalog<\/h4>\n\n\n\n\n\n\n\n\n\n
PDF Pages<\/th>\nPDF Title<\/th>\n<\/tr>\n
1<\/td>\nScope
Referenced Documents
Terminology <\/td>\n<\/tr>\n
2<\/td>\nSummary of Test Method
Significance and Use
Interferences
FIG. 1
FIG. 2 <\/td>\n<\/tr>\n
3<\/td>\nFIG. 3
FIG. 4 <\/td>\n<\/tr>\n
4<\/td>\nApparatus
Test Specimens and Sampling
Calibration
Test Conditions
Procedure
TABLE 1 <\/td>\n<\/tr>\n
5<\/td>\nCalculation
FIG. 5 <\/td>\n<\/tr>\n
6<\/td>\nReport
Precision and Bias <\/td>\n<\/tr>\n
7<\/td>\nKeywords
TABLE 2 <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

F996-10 Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics<\/b><\/p>\n\n\n\n\n
Published By<\/td>\nPublication Date<\/td>\nNumber of Pages<\/td>\n<\/tr>\n
ASTM<\/b><\/a><\/td>\n2010<\/td>\n7<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"featured_media":18137,"template":"","meta":{"rank_math_lock_modified_date":false,"ep_exclude_from_search":false},"product_cat":[576,2637],"product_tag":[],"class_list":{"0":"post-18136","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-31-080-30","7":"product_cat-astm","9":"first","10":"instock","11":"sold-individually","12":"shipping-taxable","13":"purchasable","14":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product\/18136","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/types\/product"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media\/18137"}],"wp:attachment":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media?parent=18136"}],"wp:term":[{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_cat?post=18136"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_tag?post=18136"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}