{"id":233207,"date":"2024-10-19T15:11:54","date_gmt":"2024-10-19T15:11:54","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-en-625622011\/"},"modified":"2024-10-25T09:40:32","modified_gmt":"2024-10-25T09:40:32","slug":"bs-en-625622011","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-en-625622011\/","title":{"rendered":"BS EN 62562:2011"},"content":{"rendered":"
IEC 62562:2010 describes a measurement method of dielectric properties in the planar direction of dielectric plate at microwave frequency, called a cavity resonator method. It has been created in order to develop new materials and to design microwave active and passive devices for which standardization of measurement methods of material properties is more and more important. This first edition cancels and replaces the PAS published in 2008. This bilingual version, published in 2010-05, corresponds to the English version. This publication contains colours which are considered to be useful for the correct understanding of its contents.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
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5<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | 1 Scope 2 Measurement parameters <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | 3 Theory and calculation equations 3.1 Relative permittivity and loss tangent Figures Figure 1 \u2013 Resonator structures of two types <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 3.2 Temperature dependence of \u03b5’ and tan\u03b4 Figure 2 \u2013 Correction term \u0394\u03b5’\/\u03b5’a Figure 3 \u2013 Correction terms \u0394A\/A and \u0394B\/B <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 3.3 Cavity parameters <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 4 Measurement equipment and apparatus 4.1 Measurement equipment 4.2 Measurement apparatus for complex permittivity Figure 4 \u2013 Schematic diagram of measurement equipments <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 5 Measurement procedure 5.1 Preparation of measurement apparatus 5.2 Measurement of reference level 5.3 Measurement of cavity parameters: D, H, r\u03c3, c\u03b1, \u03c1TC Figure 5 \u2013 Cavity resonator used for measurement Figure 6 \u2013 Photograph of cavity resonator for measurement around 10 GHz <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | Figure 7 \u2013 Mode chart of cavity resonator Figure 8 \u2013 Resonance peaks of cavity resonator <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | 5.4 Measurement of complex permittivity of test specimen: \u03b5’, tan\u03b4 Figure 9 \u2013 Resonance frequency f0, insertion attenuation LA0 and half-power band width fBW <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | 5.5 Temperature dependence of \u03b5’ and tan\u03b4 Figure 10 \u2013 Resonance frequency f0 of TE011 mode of cavity resonator with dielectric plate (D = 35 mm, H = 25 mm) <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | Annex A (informative) Example of measured result and accuracy Table A.1 \u2013 Measured results of cavity parameters <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | Figure A.1 \u2013 Measured temperature dependence of f1 and Quc <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | Figure A.2 \u2013 Resonance peaks of cavity resonator clamping sapphire plate Table A.2 \u2013 Measured results of \u03b5’ and tan\u03b4 for sapphire plate <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | Figure A.3 \u2013 Measured results of temperature dependence of f0, Qu, \u03b5’ and tan\u03b4 for sapphire plate <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Cavity resonator method to measure the complex permittivity of low-loss dielectric plates<\/b><\/p>\n |