{"id":318697,"date":"2024-10-19T22:00:57","date_gmt":"2024-10-19T22:00:57","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iso-222782020\/"},"modified":"2024-10-25T20:18:58","modified_gmt":"2024-10-25T20:18:58","slug":"bs-iso-222782020","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iso-222782020\/","title":{"rendered":"BS ISO 22278:2020"},"content":{"rendered":"
This document specifies the test method for measuring the crystalline quality of single-crystal thin film (wafer) using the XRD method with parallel X-ray beam. This document is applicable to all of the single-crystal thin film (wafer) as bulk or epitaxial layer structure.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
---|---|---|---|---|---|---|---|
2<\/td>\n | National foreword <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | Foreword <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | Introduction <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 4 Fundamentals 5 Devices and instruments 5.1 Schematic diagrams <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 5.2 X-ray generator <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 5.3 X-ray mirror 5.4 Monochromator 5.5 Sample attachment 5.6 Goniometer 5.7 Detector 5.8 Instrument calibration <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | 6 Preparation of sample 7 Test method and procedure 7.1 Optics alignment 7.2 Sample alignment <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | 7.3 Adjusting the initial position of goniometer 7.3.1 Symmetric diffraction <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 7.3.2 Asymmetric diffraction 7.4 Microscopic position adjustment of goniometer (\u03a6 and \u03c7 axes) and \u03c9 scan 7.4.1 Symmetric diffraction <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | 7.4.2 Asymmetric diffraction <\/td>\n<\/tr>\n | ||||||
24<\/td>\n | 7.5 Crystalline quality measurement method of single-crystal wafer 7.5.1 General 7.5.2 Selecting the flat zone position of wafer <\/td>\n<\/tr>\n | ||||||
25<\/td>\n | 7.5.3 Arranging the fixed size of the square 7.5.4 Measuring the FWHM value of RC 7.5.5 Interference effect by the wafer’s curvature 7.5.6 Doped epitaxy film on a single-crystal thin film substrate <\/td>\n<\/tr>\n | ||||||
26<\/td>\n | 8 Data analysis 9 Test report <\/td>\n<\/tr>\n | ||||||
28<\/td>\n | Annex A (informative) Example of d-spacing, 2\u03b8, \u03c7 value (tilt angle) and relative ideal intensity of the symmetric and asymmetric diffraction on the SiC single-crystal thin film (wafer) <\/td>\n<\/tr>\n | ||||||
30<\/td>\n | Annex B (informative) Determination of d-spacing, 2\u03b8, \u03c7 value (tilt angle) and relative ideal intensity for the symmetric and asymmetric diffraction on the single-crystal thin film (wafer) <\/td>\n<\/tr>\n | ||||||
34<\/td>\n | Annex C (informative) Results of interlaboratory test <\/td>\n<\/tr>\n | ||||||
36<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Fine ceramics (advanced ceramics, advanced technical ceramics). Test method for crystalline quality of single-crystal thin film (wafer) using XRD method with parallel X-ray beam<\/b><\/p>\n |