{"id":445514,"date":"2024-10-20T08:42:12","date_gmt":"2024-10-20T08:42:12","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bsi-pd-iec-ts-62607-8-32023\/"},"modified":"2024-10-26T16:11:46","modified_gmt":"2024-10-26T16:11:46","slug":"bsi-pd-iec-ts-62607-8-32023","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bsi-pd-iec-ts-62607-8-32023\/","title":{"rendered":"BSI PD IEC TS 62607-8-3:2023"},"content":{"rendered":"
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
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2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
4<\/td>\n | CONTENTS <\/td>\n<\/tr>\n | ||||||
5<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | 1 Scope 2 Normative references 3 Terms, definitions, acronyms, and abbreviated terms 3.1 Terms and definitions <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 3.2 Terms specific to this document 3.3 Abbreviated terms 4 Measurement of resistance 4.1 General <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 4.2 Method for processing and fabrication of DUT 4.3 Experimental procedures Figures Figure 1 \u2013 Example of the experimental schematic diagram for the resistance measurement Figure 2 \u2013 Photos of the sample stage <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 5 Reporting data 6 Data analysis and interpretation of results 6.1 General Tables Table 1 \u2013 Measurement sequence of analogue resistance change and its parameters <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 6.2 Parameter fitting 6.3 Interpretation of results <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | Annex A (informative)Case study A.1 Measurement of the analogue change and the fluctuation of the resistance A.1.1 General A.1.2 I-V measurement of TiN\/Ta-oxide\/TiN Figure A.1 \u2013 Transmission electron microscopy image of TiN\/Ta-oxide\/TiN <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | Figure A.2 \u2013 DC I-V measurement <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | Figure A.3 \u2013 Pulse measurement Figure A.4 \u2013 Initial measurement Figure A.5 \u2013 Repeated measurement <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | Figure A.6 \u2013 Post-measurement characterization Table A.1 \u2013 Measurement sequence of analogue resistance change and its parameters (case study) <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | A.1.3 Data analysis <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | Figure A.7 \u2013 Conductance increasing process Figure A.8 \u2013 Normalized conductance in increasing process Figure A.9 \u2013 Conductance decreasing process <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | Figure A.10 \u2013 Normalized conductance in decreasing process Table A.2 \u2013 Results of parameter fitting Table A.3 \u2013 Results of parameter fitting using normalized conductance (normalize range = \u2206Gmax in Table A.2) <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Nanomanufacturing. Key Control Characteristics – Nano-enabled metal-oxide interfacial devices. Analogue resistance change and resistance fluctuation: Electrical resistance measurement<\/b><\/p>\n |