{"id":460045,"date":"2024-10-20T10:07:28","date_gmt":"2024-10-20T10:07:28","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-en-iec-62631-2-32024\/"},"modified":"2024-10-26T18:42:33","modified_gmt":"2024-10-26T18:42:33","slug":"bs-en-iec-62631-2-32024","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-en-iec-62631-2-32024\/","title":{"rendered":"BS EN IEC 62631-2-3:2024"},"content":{"rendered":"
IEC 62631-2-3:2024 specifies the measuring technology and the test method for the relative permittivity and dielectric dissipation factor of thin single layer insulating polymer film without any additional metallization on the sample surface. The adaptive thickness range is approximately 10 \u03bcm to 100 \u03bcm. The proposed frequency is the power frequency (50 Hz or 60 Hz), and it is also suitable in the technical frequency range from 1 Hz to 1 MHz.<\/p>\n
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2<\/td>\n | undefined <\/td>\n<\/tr>\n | ||||||
5<\/td>\n | Annex ZA (normative)Normative references to international publicationswith their corresponding European publications <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | English CONTENTS <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 1 Scope 2 Normative references 3 Terms, definitions, abbreviated terms and symbols 3.1 Terms and definitions <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 3.2 Abbreviated terms and symbols <\/td>\n<\/tr>\n | ||||||
14<\/td>\n | 4 Principle of method 4.1 Principle of measurement <\/td>\n<\/tr>\n | ||||||
15<\/td>\n | 4.2 Edge effect of electrodes 5 Electrodes 5.1 Design and manufacture of electrodes <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | Figures Figure 1 \u2013 Diagram of the three-electrode system Table 1 \u2013 Dimensional parameters of the three-electrode system and the relationship between the measured \u03b5x for the thickness of sample and the measured capacitance <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 5.2 Edge effect of the measuring electrode 6 Samples 7 Measuring voltage 8 Environmental conditions for measurements <\/td>\n<\/tr>\n | ||||||
18<\/td>\n | 9 Measurement of thickness for films 10 Measurement procedure 11 Report 12 Repeatability, reproducibility and replicability <\/td>\n<\/tr>\n | ||||||
19<\/td>\n | Annex A (normative)Correction method of measured permittivity and dielectric dissipation factor for a sample with scabrous surfaces A.1 General A.2 Physical model Figure A.1 \u2013 Schematic diagram of the profile including scabrous surfaces of sample and polished flat electrodes, with the density thickness and apparent thickness (mechanical thickness) Figure A.2 \u2013 Physical model of the scabrous surfacesof the sample and polished flat electrodes <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | A.3 Relationship between the measured permittivity and the real permittivity Figure A.3 \u2013 Equivalent circuits with the sample, the gap and the electrodes <\/td>\n<\/tr>\n | ||||||
25<\/td>\n | A.4 Relationship between the measured dielectric dissipation factor and the real dielectric dissipation factor Figure A.4 \u2013 Relationship between the measured permittivity,the real permittivity, the void ratio and the contact ratio <\/td>\n<\/tr>\n | ||||||
29<\/td>\n | A.5 Method of correction for the sample with scabrous surfaces Figure A.5 \u2013 Relationship between the measured dielectric dissipation factor, the real dielectric dissipation factor, the void ratio and the contact ratio <\/td>\n<\/tr>\n | ||||||
30<\/td>\n | Annex B (informative)Suggestions for the manufacture of electrodes B.1 General B.2 Materials B.3 Manufacture of electrodes B.4 Evaluation methods of flatness and roughness B.5 Resistance of the measuring electrode system <\/td>\n<\/tr>\n | ||||||
31<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Dielectric and resistive properties of solid insulating materials – Relative permittivity and dissipation factor. Contact electrode method for insulating films. AC methods<\/b><\/p>\n |