{"id":82581,"date":"2024-10-18T03:06:46","date_gmt":"2024-10-18T03:06:46","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/ieee-581-1978\/"},"modified":"2024-10-24T19:50:41","modified_gmt":"2024-10-24T19:50:41","slug":"ieee-581-1978","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/ieee\/ieee-581-1978\/","title":{"rendered":"IEEE 581 1978"},"content":{"rendered":"

New IEEE Standard – Inactive – Withdrawn. no abstract. Withdrawn Standard. Withdrawn Date: Dec 05, 1991.<\/p>\n

PDF Catalog<\/h4>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
PDF Pages<\/th>\nPDF Title<\/th>\n<\/tr>\n
7<\/td>\n1.Introduction
1.1MOSandMNOS
1.2 Description of This Standard <\/td>\n<\/tr>\n
8<\/td>\n1.3 Mechanism of MNOS Memory Transistor
MNOS Transistor <\/td>\n<\/tr>\n
10<\/td>\n1.4 Restrictions
2 Symbols and Definitions <\/td>\n<\/tr>\n
14<\/td>\n3.References <\/td>\n<\/tr>\n
15<\/td>\n4 MNOS Memory Threshold Definition and Measurement
4.1Background
MOS Transistor <\/td>\n<\/tr>\n
16<\/td>\nIGFET Circuit Symbols for Both Nonmemory and Memory Types <\/td>\n<\/tr>\n
18<\/td>\n4.2 Threshold Voltage Test Methods
Zero Current Method for Threshold Voltage Measurement <\/td>\n<\/tr>\n
19<\/td>\nPlot of f\/l DS Versus V Measurement <\/td>\n<\/tr>\n
20<\/td>\n4.3 Threshold Voltage Shifts
Saturated Drain-Constant Current Method of Threshold Voltage Measurement
Source Follower-Constant Current Method of Threshold Voltage Measurement <\/td>\n<\/tr>\n
21<\/td>\n5 Writing Characteristics of MNOS Memory Transistors
5.1Background <\/td>\n<\/tr>\n
22<\/td>\n5.2 Methods for Deriving Writing Characteristics
Pulse Sequence to Measure Writing Characteristics
Fig 10 Writing Characteristic at Constant Writing Voltage <\/td>\n<\/tr>\n
23<\/td>\nFig 11 Typical Family of Writing Characteristics
Fig 12 Pulse Train for Unsaturated Writing <\/td>\n<\/tr>\n
24<\/td>\n6 Retention of MNOS Memory Transistors
6.1Background
Fig 13 Retention Plot <\/td>\n<\/tr>\n
25<\/td>\n6.2 Methods of Measurement <\/td>\n<\/tr>\n
26<\/td>\nFig 14 Starting Condition for LC State
Fig 15 Starting Condition for HC State <\/td>\n<\/tr>\n
27<\/td>\nFig 17 Zero Bias Retention Plot <\/td>\n<\/tr>\n
28<\/td>\n6.3 Accelerated Retention Measurements
Fig 18 Measurement of Retention at Constant Current
Fig 19 Constant Drain Current Retention Plot <\/td>\n<\/tr>\n
29<\/td>\nFig 20 Constant Gate Voltage Retention Plot <\/td>\n<\/tr>\n
30<\/td>\n7 Endurance of MNOS Memory Transistors
7.1Background
7.2 Measurement of Endurance
Fig 21 Retention Plot Before and After Write-Erase Cycling for EAROM <\/td>\n<\/tr>\n
31<\/td>\nFig 22 Pulse Train for Write-High-Write-Low Cycling
Fig 23 Presentation of Endurance Data
Definition tRo at Limit = tR0\/2 <\/td>\n<\/tr>\n
32<\/td>\nFig 25 Decay Constant Versus Accumulated Write-Erase Dose for Various Nitride Thicknesses <\/td>\n<\/tr>\n
33<\/td>\n7.3 Accelerated Endurance Testing
8 Basic Device Characteristics
8.1Background
8.2 Testing of Device Parameters <\/td>\n<\/tr>\n
34<\/td>\nFig 26 Reverse Drain Breakdown Walkout <\/td>\n<\/tr>\n
35<\/td>\n8.3 Device Construction and Description
Fig 27 Relationship of Gate Stress to Writing Characteristics <\/td>\n<\/tr>\n
36<\/td>\n9 Radiation Effects on MNOS Memory Transistors
9.1Background
Fig 28 Protected Source-Drain MNOS Structure
Table 2 MNOS Device Description (Sample)
Table 3 MNOS Process Description <\/td>\n<\/tr>\n
37<\/td>\n9.2 Measurement of Radiation Effects <\/td>\n<\/tr>\n
38<\/td>\nFig 29 MNOS RAM Writing Characteristic After Irradiation with CO 60 Gamma
Fig 30 MNOS RAM Data Retention After Irradiation with CO 60 Gamma <\/td>\n<\/tr>\n
40<\/td>\nFig 31 MNOS Memory Transistor Parameter Checker <\/td>\n<\/tr>\n
41<\/td>\nFig 32 MNOS Test Fixture and Threshold Seeker Waveforms <\/td>\n<\/tr>\n
42<\/td>\nFig 33 Typical Flash X-Ray Timing Sequence
Fig 34 Flash X-Ray Test Setup <\/td>\n<\/tr>\n
43<\/td>\n10 Alphabetical Subject Index
Fig 35 Effect of High Dose Rate on Data Retention in MNOS RAM <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":"

IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitrite-Oxide Field-Effect Transistors<\/b><\/p>\n\n\n\n\n
Published By<\/td>\nPublication Date<\/td>\nNumber of Pages<\/td>\n<\/tr>\n
IEEE<\/b><\/a><\/td>\n1978<\/td>\n44<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n","protected":false},"featured_media":82582,"template":"","meta":{"rank_math_lock_modified_date":false,"ep_exclude_from_search":false},"product_cat":[2644],"product_tag":[],"class_list":{"0":"post-82581","1":"product","2":"type-product","3":"status-publish","4":"has-post-thumbnail","6":"product_cat-ieee","8":"first","9":"instock","10":"sold-individually","11":"shipping-taxable","12":"purchasable","13":"product-type-simple"},"_links":{"self":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product\/82581","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product"}],"about":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/types\/product"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media\/82582"}],"wp:attachment":[{"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/media?parent=82581"}],"wp:term":[{"taxonomy":"product_cat","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_cat?post=82581"},{"taxonomy":"product_tag","embeddable":true,"href":"https:\/\/pdfstandards.shop\/wp-json\/wp\/v2\/product_tag?post=82581"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}