🔥🔥 Don’t Miss Out on Our End of Autumn Sale. If you have any questions, feel free to click the bottom right corner to contact our customer service..

Concat us[email protected]
Shopping Cart

No products in the cart.

🔍
BS IEC 62396-1:2012:2015 Edition

BS IEC 62396-1:2012:2015 Edition

$215.11

Process management for avionics. Atmospheric radiation effects – Accommodation of atmospheric radiation effects via single event effects within avionics electronic equipment

Published By Publication Date Number of Pages
BSI 2015 98
PDF Format Searchable Printable Preview Now
Guaranteed Safe Checkout
Category:

If you have any questions, feel free to reach out to our online customer service team by clicking on the bottom right corner. We’re here to assist you 24/7.
Email:[email protected]

This part of IEC 62396 is intended to provide guidance on atmospheric radiation effects on avionics electronics used in aircraft operating at altitudes up to 60 000 feet (18,3 km). It defines the radiation environment, the effects of that environment on electronics and provides design considerations for the accommodation of those effects within avionics systems.

This International Standard is intended to help aerospace equipment manufacturers and designers to standardise their approach to single event effects in avionics by providing guidance, leading to a standard methodology.

Details of the radiation environment are provided together with identification of potential problems caused as a result of the atmospheric radiation received. Appropriate methods are given for quantifying single event effect (SEE) rates in electronic components. The overall system safety methodology should be expanded to accommodate the single event effects rates and to demonstrate the suitability of the electronics for the application at the component and system level.

PDF Catalog

PDF Pages PDF Title
4 CONTENTS
7 FOREWORD
9 INTRODUCTION
10 1 Scope
2 Normative references
11 3 Terms and definitions
18 4 Abbreviations and acronyms
20 5 Radiation environment of the atmosphere
5.1 Radiation generation
5.2 Effect of secondary particles on avionics
5.3 Atmospheric neutrons
5.3.1 General
21 5.3.2 Energy spectrum of atmospheric neutrons
Figures
Figure 1 – Energy spectrum of atmospheric neutrons at 40 000 feet (12 160 m), latitude 45 degrees
22 5.3.3 Altitude variation of atmospheric neutrons
23 5.3.4 Latitude variation of atmospheric neutrons
Figure 2 – Model of the atmospheric neutron flux variation with altitude (see Annex D)
24 Figure 3 – Distribution of vertical rigidity cut-offs around the world
Figure 4 – Model of atmospheric neutron flux variation with latitude
25 5.3.5 Thermal neutrons within aircraft
5.4 Secondary protons
26 5.5 Other particles
Figure 5 – Energy spectrum of protons within the atmosphere
27 5.6 Solar enhancements
5.7 High altitudes greater than 60 000 feet (18 290 m)
28 6 Effects of atmospheric radiation on avionics
6.1 Types of radiation effects
6.2 Single event effects (SEE)
6.2.1 General
29 6.2.2 Single event upset (SEU)
6.2.3 Multiple bit upset (MBU) and multiple cell upset (MCU)
31 6.2.4 Single effect transients (SET)
6.2.5 Single event latch-up (SEL)
32 6.2.6 Single event functional interrupt (SEFI)
6.2.7 Single event burnout (SEB)
6.2.8 Single event gate rupture (SEGR)
33 6.2.9 Single event induced hard error (SHE)
6.2.10 SEE potential risks based on future technology
6.3 Total ionising dose (TID)
34 6.4 Displacement damage
35 7 Guidance for system designs
7.1 Overview
36 Figure 6 – System safety assessment process
37 Tables
Table 1 – Nomenclature cross reference
38 7.2 System design
Figure 7 – SEE in relation to system and LRU effect
39 7.3 Hardware considerations
40 7.4 Parts characterisation and control
7.4.1 Rigour and discipline
7.4.2 Level A systems
41 7.4.3 Level B
7.4.4 Level C
42 7.4.5 Levels D and E
8 Determination of avionics single event effects rates
8.1 Main single event effects
8.2 Single event effects with lower event rates
8.2.1 Single event burnout (SEB) and single event gate rupture (SEGR)
43 8.2.2 Single event transient (SET)
8.2.3 Single event hard error (SHE)
8.2.4 Single event latch-up (SEL)
44 8.3 Single event effects with higher event rates – Single event upset data
8.3.1 General
8.3.2 SEU cross-section
8.3.3 Proton and neutron beams for measuring SEU cross-sections
46 Figure 8 – Variation of RAM SEU cross-section as function of neutron/proton energy
47 Figure 9 – Neutron and proton SEU bit cross-section data
48 8.3.4 SEU per bit cross-section trends in SRAMs
49 8.3.5 SEU per bit cross-section trends and other SEE in DRAMs
Figure 10 – SEU cross-section in SRAMs as function of manufacture date
50 Figure 11 – SEU cross-section in DRAMs as function of manufacture date
51 8.4 Calculating SEE rates in avionics
52 8.5 Calculation of availability of full redundancy
8.5.1 General
8.5.2 SEU with mitigation and SET
53 8.5.3 Firm errors and faults
9 Considerations for SEE compliance
9.1 Compliance
9.2 Confirm the radiation environment for the avionics application
9.3 Identify system development assurance level
9.4 Assess preliminary electronic equipment design for SEE
9.4.1 Identify SEE-sensitive electronic components
9.4.2 Quantify SEE rates
9.5 Verify that the system development assurance level requirements are met for SEE
9.5.1 Combine SEE rates for entire system
54 9.5.2 Management of parts control and dependability
9.6 Corrective actions
55 Annex A (informative) Thermal neutron assessment
56 Annex B (informative) Methods of calculating SEE rates in avionics electronics
57 Table B.1 – Sources of high energy proton or neutron SEU cross-section data
58 Table B.2 – Some models for the use of heavy ion SEE data to calculate proton SEE data
62 Annex C (informative) Review of test facility availability
70 Annex D (informative) Tabular description of variation of atmospheric neutron fluxwith altitude and latitude
Table D.1 – Variation of 1 MeV to 10 MeV neutron flux in the atmosphere with altitude
Table D.2 – Variation of 1 MeV to 10 MeV neutron flux in the atmosphere with latitude
71 Annex E (informative) Consideration of effects at higher altitudes
72 Figure E.1 – Integral linear energy transfer spectra in siliconat 100 000 feet (30 480 m) for cut-off rigidities (R) from 0 GV to 17 GV
Figure E.2 – Integral linear energy transfer spectra in siliconat 75 000 feet (22 860 m) for cut-off rigidities (R) from 0 to 17 GV
73 Figure E.3 – Integral linear energy transfer spectra in siliconat 55 000 feet (16 760 m) for cut-off rigidities (R) from 0 GV to 17 GV
Figure E.4 – The influence of solar modulation on integral linear energytransfer spectra in silicon at 150 000 feet (45 720 m) for cut-off rigidities (R) of 0 GV and 8 GV
74 Figure E.5 – The influence of solar modulation on integral linear energy transferspectra in silicon at 55 000 feet (16 760 m) for cut-off rigidities (R) of 0 GV and 8 GV
75 Figure E.6 – Calculated contributions from neutrons, protons and heavy ionsto the SEU rates of the Hitachi-A 4 Mbit SRAM as a function of altitude at a cut-off –rigidity (R) of 0 GV
Figure E.7 – Calculated contributions from neutrons, protons and heavy ionsto the SEU rates of the Hitachi-A 4 Mbit SRAM as a function of altitude at a cut-off rigidity (R) of 8 GV
76 Annex F (informative) Prediction of SEE rates for ions
77 Figure F.1 – Example differential LET spectrum
Figure F.2 – Example integral chord length distributionfor isotropic particle environment
79 Annex G (informative) Late news as of 2011 on SEE cross-sections applicable to the atmospheric neutron environment
81 Figure G.1 – Variation of the high energy neutron SEU cross-sectionper bit as a function of device feature size for SRAMs and SRAM arraysin microprocessors and FPGAs
82 Figure G.2 – Variation of the high energy neutron SEU cross-section per bitas a function of device feature size for DRAMs
83 Figure G.3 – Variation of the high energy neutron SEU cross-section per device as a function of device feature size for NOR and NAND type flash memories
84 Figure G.4 – Variation of the MCU/SBU percentage as a function of feature size basedon data from many researchers in SRAMs [43, 45]
85 Figure G.5 – Variation of the high energy neutron SEFI cross-section in DRAMsas a function of device feature size
86 Figure G.6 – Variation of the high energy neutron SEFI cross-sectionin microprocessors and FPGAs as a function of device feature size
87 Figure G.7 – Variation of the high energy neutron single event latch-up (SEL) cross-section in CMOS devices (SRAMs, processors) as a function of device feature size
88 Figure G.8 – Single event burnout (SEB) cross-section in power devices (400 V–1 200 V)as a function of drain-source voltage (VDS)
Table G.1 – Information relevant to neutron-induced SET
90 Bibliography

Related products

BS IEC 62396-1:2012
$215.11